توضیحات
Gunn diode in a sintered body made in the USSR against the background of a millimeter grid
The Gann diode (invented by John Gunn in 1963 ) is a type of semiconductor diode that has no pn junctions in a semiconductor structure and is used to generate and convert oscillations in the microwave range at frequencies from 0.1 to 100 GHz
Unlike other types of diodes, the principle of operation of the Gunn diode is not based on processes in the pn-junction, that is, all its properties are determined not by the effects that occur at the junction of two different semiconductors, but by the intrinsic nonlinear properties of the semiconductor material used
In the domestic literature, Gunn diodes were called devices with volumetric instability or with intervalley electron transfer, since the active properties of diodes are due to the transition of electrons from the “central” energy valley (energy minimum) to the “side” valley, where they already have low mobility and high effective mass … In foreign literature, the Gunn diode is called TED ( Transferred Electron Device)
On the basis of the Gunn effect, oscillator and amplifier diodes have been created, which are used as pump generators in parametric amplifiers, heterodyne oscillators in superheterodyne receivers, generators in low-power transmitters and in measuring equipment
نقد و بررسیها
هیچ دیدگاهی برای این محصول نوشته نشده است.