توضیحات
The Gunn diode is a passive double-ended semiconductor device that only consists of n-type doped semiconductor material, unlike other diodes that contain a pn junction. Gunn diodes can be made of materials that consist of many initially empty, closely spaced energy regions in the conduction band, such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), cadmium telluride (CdTe), cadmium sulfide ( CdS), indium arsenide (InAs), indium antimonide (InSb), and zinc selenide (ZnSe)
The standard manufacturing procedure for the Gunn diode involves growing an epitaxial layer on a degenerate n + substrate to form three n-type semiconductor layers, as shown in the following figure on the left, with the outermost layers heavily doped compared to the middle active layer
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