ترانزیستور دو قطبی Bipolar Transistor، ГТ701

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دسته: ترانزیستور, محصولات برچسب: ترانزیستور, ترانزیستور روسی, ترانزیستور قابلمه ای, خرید ترانزیستور, خرید ترانزیستور دو قطبی, خرید ترانزیستور روسی, قیمت ترانزیستور دو قطبی

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دانلود فایل پی دی اف : gt701a

GT701A transistors are widely used in various electrical, radio and control devices. Detailed specifications are shown below. We give a guarantee against defects or other inconsistencies in technical documentation. For purchasing GT701A, please contact the sales department. Our managers will provide all the information you are interested in regarding the price, availability, delivery time, warranty or answer any other questions

GT701A
The GT701A transistor is a germanium alloy structure of pnp universal
It is intended for use in ignition systems of internal combustion engines, as well as in voltage converters

It is allowed to be used in conditions of impulse voltage and power overloads
Manufactured in a metal case with glass insulators and flexible leads
The type of device is indicated on the housing

:A graphic image of the GT701A transistor is presented below

This image is taken from printed directories, catalogs, or other publicly available resources. It may contain some inaccuracies. For more information, check with our managers

The mass of the transistor is not more than 25 g
The mass of the mounting flange is not more than 7.5 g
The main technical characteristics of the GT701A transistor
Structure: pnp
Рк т max – Constant dissipated power of the collector with a heat sink: 50 W
fh21b – Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 0.05 MHz
Uker samples – Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 55 V
Uebo samples – Breakdown voltage emitter-base at a given reverse current of the emitter and open collector circuit: 15 V
Ik max – Maximum permissible direct collector current: 12 A

Ikbo – Collector reverse current – current through the collector junction at a given collectorbase reverse voltage and an open emitter terminal: no more than 6 μA
h21E – Static current transfer coefficient for a circuit with a common emitter in the large signal mode: 10

Technical characteristics of the bipolar transistor GT701A

Parameter	Designation	a unified maths	Transistor type
Parameter	Designation	a unified maths	GT701A
Collector reverse current at U _KB , V * ¹	I _KBO	mA	6/60
Reverse emitter current at U _EB , V * ¹	I _EBO	mA	–
H-parameters measurement mode
collector voltage	U _K	AT	2
collector current	I _K	mA	five
Current transfer ratio	h _21e	–	≥10
Transmission coefficient cutoff frequency	f _gr	kHz	50
Maximum allowed parameters
DC voltage collector-base	U _{KB max}	AT	–
constant voltage collector-emitter	U _{KЭ max}	AT	55
constant voltage emitter-base	U _{EB max}	AT	fifteen
DC collector current	I _{K max}	AND	12
constant current base	I _{B max}	AND	–
power dissipation without heat sink	P _max	W	–
power dissipation from heat sink	Р _Тmax	W	50
Maximum ambient temperature	T _min	° C	+70
Minimum ambient temperature	T _min	° C	-55
Total thermal resistance of the transistor	R _{T p.s.}	° С / mW	–
internal thermal resistance	R _{T p.k}	° С / mW	1,2
Transition type, material	pnp germanium
Main purpose	For engine ignition devices

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