تریستور بشقابی 320 آمپر ، 400 ولت ، 63-Power thyristor Т123-320-4

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توضیحات

Т123-320-4
Low-frequency tablet thyristor
Designed for operation in converting devices, in DC and AC circuits of various power plants
They are produced in a sintered body for two-sided cooling
Maximum permissible average forward current in the on-state – 320 A
Repetitive impulse voltage in the off-state and repetitive impulse reverse voltage – 400 V
Air cooling, natural or forced
The type designation is shown on the body.
Overall dimension
diameter – 42 mm
height – 14 mm
Thyristor mass no more than 70 g
Case type: PT21-1
Recommended refrigerant: O123
Technical conditions: TU16-2006 IEAL.432000.054TU

The structure of the symbol
Т123-320-4
Т – thyristor
1 – serial number of the design modification
2 – designation of the body diameter according to GOST 20859.1-89
3 – designation of the housing design in accordance with GOST 20859.1-89
320 – maximum permissible average current in the open state, A
4 – repetitive voltage class

Technical characteristics of thyristors of low-frequency tablet execution T123-320

Thyristor name Maximum allowable parameter values ​​at Тп = 25 ° С Parameter values ​​at Тп = 25 ° С T j
I T (AV) U DRM / U RRM I DRM / I RRM I TSM r T (du D / dt) crit (di T / dt) crit U TM U T (TO) I L I H I GT U GT t d t q R thjc
AND AT mA AND MOhm V / μs A / μs AT AT mA mA mA AT μs μs ° C / W ° C
T123-320-4 320 400 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-5 320 500 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-6 320 600 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-7 320 700 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-8 320 800 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-9 320 900 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-10 320 1000 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-11 320 1100 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-12 320 1200 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-13 320 1300 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-14 320 1400 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-15 320 1500 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125
T123-320-16 320 1600 20 5000 0.64 500 … 1600 200 1.65 1.04 1500 300 250 2.5 3 160 0.08 -60 … + 125

:Symbols of electrical parameters of low-frequency thyristors

   I T (AV) – Maximum permissible average current in the open state
 U DRM – Maximum repetitive peak off-state voltage
U RRM – Maximum Repetitive Impulse Reverse Voltage
 I DRM – Repetitive off-state surge current
I RRM – Repetitive pulse reverse current
I TSM – On-state surge current
r T– Dynamic resistance of the thyristor
 (dV D / dt) crit – Critical rate of rise of off-state voltage
 (di T / dt) crit – Critical rate of rise of on-state current
 U TM – Impulse voltage in the open state
U T (TO) – Threshold voltage of the thyristor
I L – Thyristor turn-on current
I H – Thyristor holding current
I GT – Gate trigger direct current
 U GT – DC trigger voltage
 t d – Turn-on delay time
 t q – Off time
 R thjc – Thermal resistance of the junction – thyristor case
 T j – Thyristor junction temperature

Characteristics, parameters, diagram, description T123-320-4

دانلود فایل پی دی اف : t123-320-1

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