تریستور بشقابی فست ، 400 آمپر 1100 ولت ، High-speed thyristor ТБ143-400-11


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توضیحات

TB143-400-11 High
speed tablet thyristor
Designed for operation in static power converters, in AC and DC power plants, which require short turn-off and turn-on times, as well as high critical rates of rise of voltage in the off-state and current in the open state
They are produced in a sintered body for two-sided cooling
Maximum permissible effective current – 400 A
Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage – 1100 V
Air cooling, natural or forced
The type designation is shown on the body
Overall dimensions
diameter – 60 mm
height – 20 mm
Thyristor mass no more than 240 g
Type of cooler used – О143, О243, ОМ103, ОМ104The structure of the symbol
TB143-400-11-XXX
TB – high-speed thyristor
1 – serial number of the design modification
4 – designation of the body diameter according to GOST 20859.1-89
3 – designation of the housing design in accordance with GOST 20859.1-89
400 – maximum permissible effective current, A
11 – repetitive voltage class
X – group for the critical rate of voltage rise in the closed state
X – group by off time
X – group by turn-on time

Technical characteristics of TB143-400 high-speed tablet thyristors

The name of the
high-speed
thyristor
Maximum allowable parameter values ​​at Тп = 125 ° С Parameter values ​​at Тп = 25 ° С j
T (AV) DRM / U RRM DRM / I RRM TSM T (du D / dt) crit (di T / dt) crit TM T (TO) 2 t H GT GT q gt thjc
AND IN mA kA MOhm V / μs A / μs IN IN kA 2 s AND mA IN μs μs ° C / W ° C
TB143-400-6 400 600 50 7.0 200 … 1000 800 2.1 0.3 280 2.5 32 … 50 2.5 0.05 -60 … + 125
TB143-400-7 400 700 50 7.0 200 … 1000 800 2.1 0.3 280 2.5 32 … 50 2.5 0.05 -60 … + 125
TB143-400-8 400 800 50 7.0 200 … 1000 800 2.1 0.3 280 2.5 32 … 50 2.5 0.05 -60 … + 125
TB143-400-9 400 900 50 7.0 200 … 1000 800 2.1 0.3 280 2.5 32 … 50 2.5 0.05 -60 … + 125
TB143-400-10 400 1000 50 7.0 200 … 1000 800 2.1 0.3 280 2.5 32 … 50 2.5 0.05 -60 … + 125
TB143-400-11 400 1100 50 7.0 200 … 1000 800 2.1 0.3 280 2.5 32 … 50 2.5 0.05 -60 … + 125
TB143-400-12 400 1200 50 7.0 200 … 1000 800 2.1 0.3 280 2.5 32 … 50 2.5 0.05 -60 … + 125

Legend of the electrical parameters of high-speed thyristors
T – Direct current in the open state
TAV – Average on-state current
DRM – Repetitive peak off-state voltage
RRM – Repetitive impulse reverse voltage
DRM – Repetitive off-state surge current
I RRM – Repetitive pulse reverse current
TSM – On-state surge current
rT – Dynamic resistance of the high-speed thyristor
du D / dt) crit – Critical rate of rise of off-state voltage)
di T / dt) crit – Critical rate of rise of on-state current)
 U TM – Impulse voltage in the open state
 U T (TO) – Threshold voltage of the high-speed thyristor
 i 2 t – High speed thyristor protection index
 I H – High speed thyristor holding current
GT – Gate trigger direct current
GT – DC trigger voltage
t q – Turn-off time of the high-speed thyristor
t gt – Fast thyristor turn-on time
R thjc – Thermal resistance of the thyristor junction-case
j – Thyristor junction temperature

دانلود فایل پی دی اف: tb143-320_tb143-400

 

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