توضیحات
transistors silicon mesaepitaxial planar structures npn switching
Designed for use in switching and impulse devices
Transistors 2T935A, KT935A are produced in a ceramic-metal case with hard leads
The type of device is indicated on the case
The 2T935A-5 transistor is produced in the form of undivided crystals on a plate with contact pads for hybrid integrated circuits
The type of device is indicated on the label
The mass of the transistor in the cermet case is not more than 20 g, the crystal is not more than 0.01 g
Specifications: aA0.336.227 TUThe main technical characteristics of the transistor KT935A
Transistor structure: npn
Рк т max – Constant dissipated power of the collector with a heat sink: 60 W
fgr – Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 51 MHz
Uker max – Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 80 V 0.01 kOhm
Uebo max – Maximum emitter-base voltage at a given reverse current of the emitter and open collector circuit: 5 V
Ik max – Maximum permissible direct collector current: 20 A
Iker – Collector-emitter reverse current at a given collector-emitter reverse voltage and base-emitter resistance: no more than 30 mA 50V
h21e – Static current transfer coefficient of the transistor for circuits with a common emitter: 20 … 100
Ck – Collector junction capacity: no more than 800 pF
Rke sat – Saturation resistance between collector and emitter: no more than 0.066 Ohm
Characteristics of transistors 2Т935А, 2Т935А-5, КТ935А
| Transistor type | Structure | Limit values of parameters at Тп = 25 ° С | Parameter values at Тп = 25 ° С | T P max |
T max |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| I K max |
I K. I. max |
U CE R | U KB 0 max | U EB 0 max | R K. T. max | h21E | U ke us. |
I KBO | I EBO | I KER | f gp. | C K | With e | ||||
| AND | AND | IN | IN | IN | W | IN | mA | mA | mA | MHz | pF | pF | ° C | ° C | |||
| 2T935A | npn | 20 | thirty | 80 | – | five | 60 | 20 … 100 | <1 | – | <300 | <30 | > 51 | <800 | <3500 | 150 | -60 … + 125 |
| 2T935A-5 | npn | 20 | thirty | 80 | – | five | 60 | 20 … 100 | <1 | – | <300 | <30 | > 51 | <800 | <3500 | 150 | -60 … + 125 |
| KT935A | npn | 20 | thirty | 80 | – | five | 60 | 20 … 100 | <1 | – | <300 | <30 | > 51 | <800 | <3500 | 150 | -45 … + 100 |
Symbols of electrical parameters of transistors
I K max – maximum permissible direct current of the transistor collector
I K. I. max – the maximum permissible pulse current of the transistor collector
U FE R max – maximum voltage between the collector and the emitter at a given collector current and resistance in the base-emitter circuit
U CE 0 max – maximum voltage between the collector and the emitter of the transistor at a given collector current and base current equal to zero
U KB 0 max– maximum collector-base voltage at a given collector current and emitter current equal to zero
U EB 0 max – the maximum permissible constant voltage emitter-base at a collector current equal to zero
Р К max – maximum permissible constant power dissipated on the transistor collector
h21E – static current transfer coefficient of the bipolar transistor
U CE us.– the saturation voltage between the collector and the emitter of the transistor
I KBO – collector reverse current. Current through the collector junction at a given collector-base reverse voltage and an open emitter terminal
I EBO – emitter reverse current. The current through the emitter junction at a given emitter-base reverse voltage and an open collector terminal
I KER – collector-emitter reverse current at a given collector-emitter reverse voltage and resistance in the base-emitter circuit
f gr – cutoff frequency of the current transfer coefficient
С К – capacity of the collector junction
C E – the capacity of the collector junction
Т П max – maximum allowable junction temperature
T max – maximum permissible ambient temperature
Characteristics, parameters, diagram, description
KT935A
Specifications; Datasheet:Download PDF file
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