توضیحات
Transistors P701A silicon alloy-diffusion structures npn amplifying low-frequency
Designed for use in amplifiers and generators of electronic devices
They are produced in a metal-to-glass case with rigid leads
The type of device is indicated on the case
The mass of the transistor is not more than 12 g, with a mounting flange – not more than 16 g
Specifications: ЩМ3.365.063 ТУ
Technical characteristics of transistors P701, P701A, P701B
| Transistor type | Structure | Limit values of parameters at Тп = 25 ° С | Parameter values at Тп = 25 ° С | T P max |
T max |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| I K max |
I K. I. max |
U FE R max (U FE 0 max) |
U KB 0 max | U EB 0 max | P K max (P K T. max) |
h21E | U ke us. |
I KBO | I EBO | f gp. | K W | C K | With e | ||||
| AND | AND | IN | IN | IN | W | IN | μA | mA | MHz | dB | pF | pF | ° C | ° C | |||
| P701 | npn | 0.5 | 1 | 40 | 40 | 2 | 1 (10) | 10 … 40 | 7 | 100 | 3 | 20 | – | – | – | 125 | -60 … + 125 |
| P701A | npn | 0.5 | 1 | 60 | 60 | 2 | 1 (10) | 15 … 60 | 7 | 100 | 3 | 20 | – | – | – | 125 | -60 … + 125 |
| P701B | npn | 0.5 | 1 | 40 | 40 | 2 | 1 (10) | 30 … 130 | 7 | 100 | 3 | 20 | – | – | – | 125 | -55 … + 100 |
Symbols of electrical parameters of transistors
I K max – the maximum permissible direct current of the transistor collector
I K. I. max – the maximum permissible pulse current of the transistor collector
U FE R max – maximum voltage between collector and emitter at a given collector current and resistance in the base-emitter circuit
U CE 0 max – maximum voltage between the collector and the emitter of the transistor at a given collector current and base current equal to zero
U KB 0 max– maximum collector-base voltage at a given collector current and emitter current equal to zero
U EB 0 max – the maximum permissible constant emitter-base voltage at a collector current equal to zero
Р К max – maximum permissible constant power dissipated on the transistor collector
P KT max – the maximum allowable continuous power dissipation in the transistor collector to the heat sink
h21E – static current transfer coefficient of the bipolar transistor
U CE us.is the saturation voltage between the collector and the emitter of the transistor
I KBO – collector reverse current. The current through the collector junction at a given collector-base reverse voltage and an open emitter terminal
I EBO – emitter reverse current. Current through the emitter junction at a given emitter-base reverse voltage and an open collector terminal
f gr – cutoff frequency of the current transfer coefficient
K W – the noise figure of the transistor
С К – capacity of the collector junction
С Э – capacity of the collector junction
Т П max – maximum allowable junction temperature
T max – maximum permissible ambient temperature
Characteristics, parameters, diagram, description
P701A
Specifications; Datasheet:Download PDF file
نقد و بررسیها
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